Experimental measurements taken from the realized prototype of the optimized high-speed receiver analog front-end, featuring a cascaded transimpedance amplifier (TIA) and continuous-
time linear equalizer (CTLE), prove the substantial enhancements in signal processing performance. The realized chip, fabricated with a deep-submicron CMOS process, was tested under various rigorous tests to analyze its bandwidth, gain, noise performance, and equalization features.
The measurement of the bandwidth, done with a network analyzer, showed more than 3-dB bandwidth over the design specification, reflecting on the success of cascaded TIA architecture in high-speed performance. The expanded bandwidth is equivalent to a higher data rate capability that is very important for contemporary high-speed communication systems. The gain of the TIA stage, as measured with a signal generator and an oscilloscope, was in agreement with the simulated values, verifying the correctness of the design and the quality of the implementation. The cascaded structure successfully offered the required gain to amplify the low-level input signals without sacrificing a wide bandwidth.
The noise performance of the analog front-end was evaluated by measuring the input-referred noise current density. Figure 8, 9, 10 shows the transient response, AC response and Gain of the TIA. Tables 1 and 2 shows the parameters of TIA.
Table 1
Parameters | Cell name | Inputs |
|---|
Vdd | Vdc | DC Voltage = 900m |
VIN | Vsin | AC Magnitude = 700m Amplitude = 7m Frequency = 16G |
Table shows the parameters for a circuit simulation or analysis. It specifies two input sources: Vdd and VIN.
Vdd is a DC voltage source (Vdc) with a value of 900 millivolts (900m).
VIN is referred to as an AC sinusoidal voltage source (Vsin) with an AC amplitude of 700 millivolts (700m), an amplitude of 7 millivolts (7m), and a frequency of 16 Gigahertz (16G).
This setup implies that the simulation entails examining the response of the circuit to both a constant DC bias and a high-frequency AC. The parameters represent a high-frequency AC signal of relatively small amplitude superimposed on a DC voltage.
Table 2
Parameter | [1] | [2] | [3] | [4] | [5] | This work |
|---|
Technology | 40nm | 130nm | 40nm | 40nm | 0.11um | 90nm |
Supply | 1.2V | 2V | 0.9V | 1.1V | 3.3V | 900mV |
Power Consumption | 3.01mW | 9.8mW | 3.9mW | 2mW | 158.4mW | 2.00898uW |
The table compares technology node, supply voltage, and power consumption.
Technology Node: The fabrication technology used ranges from 40nm to 0.11um. "This work" uses a 90nm technology node.
Supply Voltage: The supply voltage varies significantly, from 0.9V to 3.3V. "This work" utilizes a supply voltage of 900mV (0.9V).
Power Consumption: The power consumption has a very wide range between 2mW and 158.4mW. Notably, "This work" reports a power consumption of 2.00898uW (microWatts), significantly lower than other entries.
The output reflected a low level of noise, which was a result of proper selection of the sizes of devices and biasing conditions for the TIA stages. This low noise is vital for obtaining a high signal-to-noise ratio (SNR), which directly influences the bit error rate (BER) of the receiver. The CTLE, intended for compensating channel-induced inter-symbol interference (ISI), was able to prove its equalization efficiency. Eye diagram measurements, made with a high-speed pattern generator and an oscilloscope, indicated a noticeable improvement in eye opening following the CTLE stage. This is an indication of the capability of the CTLE to reduce ISI and improve signal integrity. The frequency response of the CTLE was also measured with a network analyzer, and the findings correlated with the simulated peaking characteristics, which justified the equalization circuit design.
The CTLE parameter adjustability, realized from the control circuitry, was used to tune the equalization to the channel conditions for maximized performance. The analog front-end power dissipation was calibrated with a multimeter and an external power source. The obtained results showed within-design power consumption, which exemplified the performance of the implemented circuit design. The application of low-power methods and cautious biasing helped reduce power dissipation to a low level with high performance. The measurements were compared with the values obtained by simulation from the post-layout simulations. Figure 11, 12, 13 shows the transient response, AC response and Gain of the CTLE. Tables 3 and 4 shows the parameters of CTLE.
Table 3
Parameter | Cell Name | Inputs |
|---|
Vdd | Vdc | DC voltage = 900m |
Vin1 | Vsin | AC Magnitude = 700m Amplitude = 7m Frequency = 16G |
Vin2 | Vsin | AC Magnitude = -800m Amplitude = -8m Frequency = 16G |
It specifies three different voltage inputs:
Vdd: This is a DC voltage source (Vdc) with a voltage value of 900 millivolts (900m).
Vin1: This is an AC sinusoidal voltage source (Vsin) with the following parameters:
AC Magnitude: 700 millivolts (700m)
Amplitude: 7 millivolts (7m)
Frequency: 16 Gigahertz (16G)
Vin2: This is also an AC sinusoidal voltage source (Vsin), but with different parameters:
AC Magnitude: -800 millivolts (-800m)
Amplitude: -8 millivolts (-8m)
Frequency: 16 Gigahertz (16G)
The table shows that the simulation involves a DC bias (Vdd) along with two AC inputs (Vin1 and Vin2) at a high frequency of 16GHz. Interestingly, Vin2 possesses a negative magnitude and amplitude, which implies a phase-shifted or inverted signal compared to Vin1.
Table 4
Parameter | [1] | [2] | [3] | [4] | [5] | This work |
|---|
Technology | 65nm(ctle & 1 tap DFE) | 40nm (ctle) | 65nm (ctle) | 40nm (ctle & 1 tap DFE) | 28nm(ctle) | 90nm (ctle) |
Supply | 1.1 V | 1.1 V | 1.2 V | 1.15V | 1.2 V | 0.9V |
Power consumption | 37mW | 25.2mW | 76.3mW | 20.6mW | 17mW | 62.0613uW |
The table focuses on three critical parameters: Technology, Supply Voltage, and Power Consumption.
Technology: The table provides the fabrication technology employed in the range from 65nm to 28nm, with "This work" employing a 90nm technology. Interesting to note is that some entries mention the use of CTLE (Continuous-Time Linear Equalizer) and/or DFE (Decision Feedback Equalizer) circuitry.
Supply Voltage: The supply voltage ranges from 0.9V to 1.2V in the various studies. "This work" has a supply voltage of 0.9V.
Power Consumption: The power consumption ranges from 17mW to 76.3mW for the studies referred. "This work" has a power consumption of 62.0613uW (microWatts), which is far less than the rest.
The satisfactory agreement of the measured and simulated results confirms the design procedure and the reliability of the models of simulation. Any small differences found were explained by process variations and parasitic effects, which are unavoidable in integrated circuit fabrication. The analog front-end's robustness was assessed through testing its behavior under different operation conditions, such as temperature fluctuation and voltage supply variations. The findings revealed that the circuit performed within the desired range, showing that the circuit is well-suited for practical applications. In summary, the experimental results validate the successful deployment of the optimized high-speed receiver analog front-end. The cascaded TIA and CTLE successfully implemented the required bandwidth, gain, noise performance, and equalization functions.
The low power dissipation and stable operation further demonstrate the design's appropriateness for high-speed communication systems. The experimental verification of the design lays a firm basis for further research and development in this field, including optimization and integration of sophisticated signal processing methods. Figure 14, 15, 16 shows the transient response, AC response and Gain of the both TIA and CTLE. Tables 5 and 6 shows the parameters of both CTLE and TIA.
First the Receiver analog front end design include transimpedance amplifier(TIA) and continous time linear equalizier(CTLE) according to above rafe circuit diagram in first stage the application of two, single ended TIA cells are combined with double ended CTLE cell with feedback resistance and inductance
Table 5
Parameters of Receiver Analog Front End
Parameter | Cell Name | Inputs |
|---|
Vdd | Vdc | DC voltage = 900m |
In1 | Vsin | AC Magnitude = 700m Amplitude = 7m Frequency = 16G |
In2 | Vsin | AC Magnitude = -800m Amplitude = -8m Frequency = 16G |
Vdd: This is a DC voltage source (Vdc) with a magnitude of 900 millivolts (900m).
In1: This is an AC sinusoidal voltage source (Vsin) with the following parameters:
AC Magnitude: 700 millivolts (700m)
Amplitude: 7 millivolts (7m)
Frequency: 16 Gigahertz (16G)
In2: This is also an AC sinusoidal voltage source (Vsin) with the following parameters:
AC Magnitude: -800 millivolts (-800m)
Amplitude: -8 millivolts (-8m)
Frequency: 16 Gigahertz (16G)
The table shows a simulation configuration with an applied constant DC bias (Vdd) and two high-frequency AC inputs (In1 and In2). The minus sign and the amplitude of In2 imply it's an inverting or phase-shifted replica of In1.
Table 6
Comparison of Receiver Analog Front End
Parameter | [1] | [2] | [3] | [4] | [5] | This work |
|---|
Technology | 65nm High IF | 65nm Filter | 40nm FTNC -RX | 65nm LP | 65nm single ended | 90nm CTLE & TIA |
Supply | 1.2 V | 1.2 V | 1.3 V | 1.2 V | 1.2 V | 0.9V |
Power consumption | 55-65mW | 18-57.8mW | 35.1–78 mW | 9.6mW | 66.8mW | 12.4605uW |